Search results for "Vapor–liquid–solid method"
showing 10 items of 11 documents
Influence Of The Electrical Parameters On The Fabrication Of Copper Nanowires Into Anodic Alumina Templates
2009
Abstract Metallic copper nanowires have been grown into the pores of alumina membranes by electrodeposition from an aqueous solution containing CuSO 4 . and H 3 BO 3 at pH 3. In order to study the influence of the electrical parameters on growth and structure of nanowires, different deposition potentials (both in the region where hydrogen evolution reaction is allowed or not) and voltage perturbation modes (constant potential or unipolar pulsed depositions) were applied. In all cases, pure polycrystalline Cu nanowires were fabricated into template pores, having lengths increasing with the total deposition time. These nanowires were self-standing, because they retain their vertical orientati…
Template electrosynthesis of aligned Cu2O nanowires
2008
Abstract Large arrays of aligned copper oxide nanowires were produced by electrodeposition, using anodic alumina membranes as template. We have studied the effect of two fundamental parameters involved in fabrication process: potential perturbation and bath composition. Performing electrodeposition from a copper acetate/sodium acetate bath (pH 6.5), we found that chemical composition of nanowires varied in dependence on the shape of the applied potential perturbation: pure copper oxide nanowires were produced by pulsed potential, whilst continuous electrodeposition resulted in a co-deposition of Cu and Cu 2 O. In a copper lactate bath, buffered at pH 10, the shape of perturbation did not in…
Growth temperature influence on the GaN nanowires grown by MOVPE technique
2011
GaN nanowires (NWs) were successfully grown by Vapor-Liquid-Solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns. The characterization by scanning electron microscopy (SEM) reveals an optimum growth temperature at 790°C and X-ray diffraction (XRD) investigations indicates oriented crystallinity of grown NWs.
Two-terminal nanoelectromechanical devices based on germanium nanowires.
2009
A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. …
Growth and Characterization of Ordered PbO[sub 2] Nanowire Arrays
2008
Large arrays of PbO 2 nanowires having high aspect ratios (length-to-width ratio) were grown by potentiostatic electrodeposition into anodic alumina templates under anodic polarization. Different electrolytic solutions were used in order to obtain nanowires of pure α-PbO 2 , pure β-PbO 2 , and a a + β mixture, We have found that, in a lead nitrate bath, a crystallographic structure of nanowires depends on pH; this latter was varied adding diluted nitric acid to the electrolyte. Nanowires of pure β-PbO 2 were obtained at pH 0.6, while mixed α-PbO 2 + β-PbΟ 2 nanowires were grown at pH 2. Pure α-phase was obtained in a bath containing lead acetate at pH 6.6. In all deposition conditions, nano…
Characterization of Sn-Co nanowires grown into alumina template
2009
Nanowires of Sn-Co alloys were grown inside the channels of anodic alumina membrane by potentiostatic deposition. The scanning electron microscope images showed the formation of cylindrical nanowires whose height was increasing with deposition time. The X-ray patterns did not show significant diffraction peaks, suggesting the formation of amorphous phases. The higher content of Co in the nanowires, in comparison to the initial composition of the electrolytic bath, was attributed to a higher rate of Co electrodeposition. These nanowires seem to possess specific features suitable for innovative application in the field of Li-ion batteries due to their dimensional stability and high specific s…
The synthesis of matrices of embedded semiconducting nanowires.
2004
In this work we report how single crystal nanowires can be assembled into regular arrays using mesoporous thin films to define the architecture. Mesoporous thin films were prepared by a sol-gel method. These provide films of very regular structure and dimensions. The films produced in this way have almost single crystal like structures and can also exhibit strong epitaxy to the underlying silicon substrate. The films are subjected to a supercritical fluid (SCF) environment in which a precursor is decomposed to yield nanowires of metals, semiconductors or oxides. Using these SCF conditions, pore filling is complete and the products are nanowires which are single crystals and structurally ali…
(Ga,In)P nanowires grown without intentional catalyst
2015
Abstract We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ( ( C 2 H 5 ) 3 Ga ) , used as Ga source, is transported by the N 2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga 1 − x In x P / Ga 1 − y In y P interfaces ( x ≠ y ) is proposed to explain this efficient light e…
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
2004
Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…
Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method
2015
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…